By Rolf Haug
The 2008 Spring assembly of the Arbeitskreis Festkörperphysik used to be held in Berlin, Germany, among February 24 and February 29, 2008 along side the 72nd Annual assembly of the Deutsche Physikalische Gesellschaft. The 2008 assembly was once the biggest physics assembly in Europe and one of the greatest physics conferences on the planet in 2008.
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Extra resources for Advances in Solid State Physics 48
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For example, in the case the nanowires are grown on (111)B substrates, all layers have the same thickness. As a result, the cross-section of the layers forms a hexagon. This new design 22 D. Spirkoska et al. Fig. 6. (a) Schematics of the principle of heteroepitaxy on the facets of the nanowires. Due to the directionality of the beam, the geometry of the resulting layers results in hexagonal or asymmetric. Here, the geometry for nanowires grown on (111)B substrates is shown. (b) Photoluminescence of a 14 nm GaAs Quantum Well deposited on a nanowire.
53 eV is shown. This is consistent with a 14 nm quantum well, in agreement with the material deposited. Moreover, the same photoluminescence spectrum was obtained, when measured along the wire. Coaxial-type nanowire heterostructures have been fabricated in the past. The function of the coating layer has been limited to the passivation of the surface states of the nanowires and has been fabricated with an isotropic radial morphology [38, 39]. Here we show that a uniform deposition on each side facets of a nanowire can be added with intrinsic functional purposes.